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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Surface Mount | NO |
| Mounting Type | Through Hole |
| Number of Functions | 1 |
| RoHS Status | Non-RoHS Compliant |
| Part Status | Obsolete |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Memory Width | 8 |
| Terminal Position | DUAL |
| Supply Voltage | 5V |
| Power Supplies | 5V |
| Packaging | Tube |
| Qualification Status | Not Qualified |
| JESD-609 Code | e0 |
| Terminal Pitch | 2.54mm |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Supply Voltage-Max (Vsup) | 5.5V |
| Reach Compliance Code | not_compliant |
| Published | 2005 |
| Number of Terminations | 28 |
| Pin Count | 28 |
| Supply Voltage-Min (Vsup) | 4.5V |
| Width | 7.62mm |
| Memory Interface | Parallel |
| Terminal Finish | TIN LEAD |
| Voltage – Supply | 4.5V~5.5V |
| Memory Type | Non-Volatile |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature | -55°C~125°C TA |
| Subcategory | SRAMs |
| HTS Code | 8542.32.00.41 |
| Access Time (Max) | 55 ns |
| Write Cycle Time – Word, Page | 55ns |
| Length | 35.56mm |
| Supply Current-Max | 0.08mA |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 64Kb 8K x 8 |
| Screening Level | 38535Q/M;38534H;883B |
| Standby Current-Max | 0.002A |
| ECCN Code | 3A001.A.2.C |
| Height Seated (Max) | 4.11mm |
| Organization | 8KX8 |
| Memory Density | 65536 bit |
| JESD-30 Code | R-CDIP-T28 |
| Package / Case | 28-CDIP (0.300, 7.62mm) |
| Base Part Number | STK11C68 |
| Additional Feature | EEPROM SOFTWARE STORE/RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES |
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