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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| Reverse Pinout | NO |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Number of Functions | 1 |
| Memory Width | 1 |
| RoHS Status | RoHS Compliant |
| Surface Mount | YES |
| Number of Terminations | 8 |
| Terminal Position | DUAL |
| Supply Voltage | 3.3V |
| Programming Voltage | 3.3V |
| Technology | CMOS |
| Data Retention Time-Min | 20 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Factory Lead Time | 7 Weeks |
| Terminal Pitch | 1.27mm |
| Width | 5mm |
| Reach Compliance Code | compliant |
| Memory Format | FLASH |
| Supply Voltage-Max (Vsup) | 3.6V |
| Height Seated (Max) | 0.8mm |
| Length | 6mm |
| Operating Temperature | -40°C~125°C TA |
| Memory Type | Non-Volatile |
| Memory Interface | SPI |
| Serial Bus Type | SPI |
| Clock Frequency | 40MHz |
| Parallel/Serial | SERIAL |
| Supply Voltage-Min (Vsup) | 2.3V |
| Write Cycle Time – Word, Page | 5ms |
| Operating Mode | SYNCHRONOUS |
| Voltage – Supply | 2.3V~3.6V |
| Package / Case | 8-WDFN Exposed Pad |
| Write Protection | HARDWARE/SOFTWARE |
| Endurance | 100000 Write/Erase Cycles |
| JESD-30 Code | R-PDSO-N8 |
| Memory Size | 4Mb 512K x 8 |
| Standby Current-Max | 0.00001A |
| Memory Density | 4194304 bit |
| Supply Current-Max | 0.015mA |
| Organization | 4MX1 |
| Series | Automotive, AEC-Q100, SST25 |
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