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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
Part StatusActive
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Number of Elements1
Radiation HardeningNo
Surface MountYES
JESD-609 Codee3
Lead FreeLead Free
Factory Lead Time12 Weeks
Number of Pins4
Number of Terminations4
Pin Count4
Terminal FormGULL WING
Published2011
Drain to Source Breakdown Voltage25V
Max Dual Supply Voltage25V
Terminal FinishTin (Sn)
Transistor Element MaterialSILICON
Terminal PositionSINGLE
Gate to Source Voltage (Vgs)20V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Transistor ApplicationSWITCHING
Operating Temperature-55°C~175°C TJ
Operating ModeENHANCEMENT MODE
Vgs (Max)±20V
Additional FeatureHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN DIODE
Case ConnectionDRAIN
Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
Turn-Off Delay Time30 ns
Fall Time (Typ)9 ns
Turn On Delay Time16 ns
Rise Time17 ns
Package / CaseSC-100, SOT-669
JEDEC-95 CodeMO-235
Power Dissipation58W
Continuous Drain Current (ID)73A
Vgs(th) (Max) @ Id1.95V @ 1mA
Power Dissipation-Max58W Tc
Drain-source On Resistance-Max0.0079Ohm
Avalanche Energy Rating (Eas)15 mJ
Current – Continuous Drain (Id) @ 25°C73A Tc
Pulsed Drain Current-Max (IDM)292A
Rds On (Max) @ Id, Vgs6.1m Ω @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs19.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1099pF @ 12V

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