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In Stock: 500

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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
Part StatusActive
Surface MountNO
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting TypeThrough Hole
Number of Elements1
Radiation HardeningNo
JESD-609 Codee3
Factory Lead Time12 Weeks
PackagingTube
Number of Terminations3
Number of Pins3
Pin Count3
Drain to Source Breakdown Voltage100V
Max Dual Supply Voltage100V
Published2011
Drive Voltage (Max Rds On,Min Rds On)10V
Terminal FinishTin (Sn)
Transistor Element MaterialSILICON
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Transistor ApplicationSWITCHING
Operating Temperature-55°C~175°C TJ
Operating ModeENHANCEMENT MODE
Vgs (Max)±20V
Package / CaseTO-220-3
Case ConnectionDRAIN
JEDEC-95 CodeTO-220AB
Vgs(th) (Max) @ Id4V @ 1mA
Continuous Drain Current (ID)37A
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Fall Time (Typ)8.9 ns
Turn On Delay Time14.4 ns
Current – Continuous Drain (Id) @ 25°C37A Tc
Power Dissipation103W
Power Dissipation-Max103W Tc
Avalanche Energy Rating (Eas)59 mJ
Rise Time11.4ns
Turn-Off Delay Time29.6 ns
Drain-source On Resistance-Max0.0268Ohm
Input Capacitance (Ciss) (Max) @ Vds1624pF @ 50V
Rds On (Max) @ Id, Vgs26.8m Ω @ 15A, 10V

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