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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| Number of Ports | 1 |
| ECCN Code | EAR99 |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Lead Free | Lead Free |
| Part Status | Obsolete |
| Memory Width | 8 |
| Packaging | Tray |
| Peak Reflow Temperature (Cel) | 260 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Published | 2010 |
| Supply Voltage | 1.8V |
| Operating Supply Voltage | 1.8V |
| Interleaved Burst Length | 48 |
| Sequential Burst Length | 48 |
| Length | 10mm |
| Terminal Position | BOTTOM |
| Number of Pins | 60 |
| Number of Terminations | 60 |
| Pin Count | 60 |
| Terminal Pitch | 0.8mm |
| Memory Interface | Parallel |
| Height Seated (Max) | 1.2mm |
| JESD-609 Code | e1 |
| Output Characteristics | 3-STATE |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Memory Type | Volatile |
| Data Bus Width | 8b |
| Supply Voltage-Min (Vsup) | 1.7V |
| Address Bus Width | 16b |
| I/O Type | COMMON |
| Supply Voltage-Max (Vsup) | 1.9V |
| Memory Format | DRAM |
| Clock Frequency | 400MHz |
| Write Cycle Time – Word, Page | 15ns |
| Voltage – Supply | 1.7V~1.9V |
| Nominal Supply Current | 125mA |
| Refresh Cycles | 8192 |
| Max Frequency | 800MHz |
| Additional Feature | AUTO/SELF REFRESH |
| Operating Temperature | 0°C~85°C TC |
| Memory Size | 512Mb 64M x 8 |
| Technology | SDRAM – DDR2 |
| Package / Case | 60-TFBGA |
| Density | 512 Mb |
| Organization | 64MX8 |
| HTS Code | 8542.32.00.28 |
| Access Time | 400ps |
| Standby Current-Max | 0.007A |
| Base Part Number | MT47H64M8 |
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