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In Stock: 500

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Product Details

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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
RoHS StatusROHS3 Compliant
Mounting TypeSurface Mount
MountSurface Mount
Pbfree Codeyes
Radiation HardeningNo
JESD-609 Codee3
Lead FreeLead Free
Part StatusObsolete
Memory Width8
PackagingTray
Published2012
Peak Reflow Temperature (Cel)260
Moisture Sensitivity Level (MSL)3 (168 Hours)
Time@Peak Reflow Temperature-Max (s)30
Supply Voltage1.8V
Operating Supply Voltage1.8V
Terminal PositionBOTTOM
Terminal Pitch0.8mm
Memory InterfaceParallel
Terminal FinishMATTE TIN
Output Characteristics3-STATE
Memory TypeVolatile
Data Bus Width8b
I/O TypeCOMMON
Memory FormatDRAM
Write Cycle Time – Word, Page15ns
Voltage – Supply1.7V~1.9V
Number of Terminations63
Number of Pins63
Refresh Cycles8192
Address Bus Width18b
Clock Frequency333MHz
Max Frequency667MHz
Operating Temperature0°C~85°C TC
TechnologySDRAM – DDR2
Memory Size4Gb 512M x 8
Organization512MX8
Access Time450ps
Density4 Gb
Package / Case63-TFBGA
Base Part NumberMT47H512M8

Manufacturer introduction

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