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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
Mounting Type | Surface Mount |
Mount | Surface Mount |
Number of Functions | 1 |
Number of Ports | 1 |
ECCN Code | EAR99 |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |
Part Status | Obsolete |
Memory Width | 8 |
Terminal Position | DUAL |
Packaging | Tray |
Lead Free | Contains Lead |
JESD-609 Code | e0 |
Supply Voltage | 2.5V |
Operating Supply Voltage | 2.5V |
Time@Peak Reflow Temperature-Max (s) | 30 |
Published | 2007 |
Terminal Pitch | 0.65mm |
Supply Voltage-Max (Vsup) | 2.7V |
Memory Interface | Parallel |
Height Seated (Max) | 1.2mm |
Terminal Finish | TIN LEAD |
Operating Temperature | 0°C~70°C TA |
Output Characteristics | 3-STATE |
Number of Pins | 66 |
Number of Terminations | 66 |
Pin Count | 66 |
Memory Type | Volatile |
Data Bus Width | 8b |
Address Bus Width | 16b |
Supply Voltage-Min (Vsup) | 2.3V |
I/O Type | COMMON |
Clock Frequency | 133MHz |
Peak Reflow Temperature (Cel) | 235 |
Memory Format | DRAM |
Write Cycle Time – Word, Page | 15ns |
Refresh Cycles | 8192 |
Additional Feature | AUTO/SELF REFRESH |
Nominal Supply Current | 210mA |
Standby Current-Max | 0.01A |
Voltage – Supply | 2.3V~2.7V |
Length | 22.22mm |
Moisture Sensitivity Level (MSL) | 5 (48 Hours) |
Sequential Burst Length | 248 |
Interleaved Burst Length | 248 |
Technology | SDRAM – DDR |
Memory Size | 1Gb 128M x 8 |
Organization | 128MX8 |
Package / Case | 66-TSSOP (0.400, 10.16mm Width) |
Density | 1 Gb |
HTS Code | 8542.32.00.32 |
Access Time | 750ps |
Base Part Number | MT46V128M8 |
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