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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Number of Functions | 1 |
Number of Ports | 1 |
ECCN Code | EAR99 |
Pbfree Code | yes |
Surface Mount | YES |
Part Status | Obsolete |
Packaging | Tray |
Qualification Status | Not Qualified |
Memory Width | 16 |
Published | 2012 |
Peak Reflow Temperature (Cel) | 260 |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Time@Peak Reflow Temperature-Max (s) | 30 |
Supply Voltage | 1.8V |
Power Supplies | 1.8V |
Operating Temperature | -40°C~85°C TA |
Height Seated (Max) | 1mm |
Terminal Position | BOTTOM |
Number of Terminations | 60 |
Pin Count | 60 |
Terminal Pitch | 0.8mm |
Memory Interface | Parallel |
JESD-609 Code | e1 |
Output Characteristics | 3-STATE |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Width | 8mm |
Length | 9mm |
Memory Type | Volatile |
Supply Voltage-Min (Vsup) | 1.7V |
Operating Mode | SYNCHRONOUS |
I/O Type | COMMON |
Access Time | 5ns |
Memory Format | DRAM |
Clock Frequency | 166MHz |
Write Cycle Time – Word, Page | 15ns |
Refresh Cycles | 8192 |
Supply Voltage-Max (Vsup) | 1.95V |
Additional Feature | AUTO/SELF REFRESH |
Standby Current-Max | 0.00001A |
Voltage – Supply | 1.7V~1.95V |
Memory Density | 1073741824 bit |
Memory Size | 1Gb 64M x 16 |
Organization | 64MX16 |
Technology | SDRAM – Mobile LPDDR |
Supply Current-Max | 0.12mA |
HTS Code | 8542.32.00.32 |
Interleaved Burst Length | 24816 |
Sequential Burst Length | 24816 |
JESD-30 Code | R-PBGA-B60 |
Package / Case | 60-VFBGA |
Base Part Number | MT46H64M16 |
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