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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Mount | Surface Mount |
Number of Functions | 1 |
Number of Ports | 1 |
ECCN Code | EAR99 |
Pbfree Code | yes |
Radiation Hardening | No |
Lead Free | Lead Free |
Part Status | Obsolete |
Interleaved Burst Length | 8 |
Sequential Burst Length | 8 |
Memory Width | 4 |
Packaging | Tray |
Peak Reflow Temperature (Cel) | 260 |
Published | 2011 |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Time@Peak Reflow Temperature-Max (s) | 30 |
Terminal Position | BOTTOM |
Terminal Pitch | 0.8mm |
Memory Interface | Parallel |
Height Seated (Max) | 1.2mm |
JESD-609 Code | e1 |
Output Characteristics | 3-STATE |
Supply Voltage | 1.5V |
Operating Supply Voltage | 1.5V |
Memory Type | Volatile |
Number of Terminations | 78 |
Number of Pins | 78 |
Pin Count | 78 |
I/O Type | COMMON |
Memory Format | DRAM |
Length | 11.5mm |
Nominal Supply Current | 125mA |
Refresh Cycles | 8192 |
Terminal Finish | TIN SILVER COPPER |
Voltage – Supply | 1.425V~1.575V |
Additional Feature | AUTO/SELF REFRESH |
Supply Voltage-Max (Vsup) | 1.575V |
Supply Voltage-Min (Vsup) | 1.425V |
Address Bus Width | 17b |
Clock Frequency | 667MHz |
Operating Temperature | 0°C~95°C TC |
Technology | SDRAM – DDR3 |
Package / Case | 78-TFBGA |
Density | 1 Gb |
HTS Code | 8542.32.00.32 |
Access Mode | MULTI BANK PAGE BURST |
Data Bus Width | 4b |
Organization | 256MX4 |
Memory Size | 1Gb 256M x 4 |
Access Time (Max) | 0.125 ns |
Base Part Number | MT41J256M4 |
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