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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Number of Functions | 1 |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Surface Mount | YES |
| JESD-609 Code | e3 |
| Factory Lead Time | 12 Weeks |
| Number of Ports | 4 |
| Packaging | Tray |
| Peak Reflow Temperature (Cel) | 260 |
| Supply Voltage | 2.5V |
| Operating Supply Voltage | 2.5V |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Height Seated (Max) | 1.6mm |
| Memory Width | 32 |
| Terminal Position | QUAD |
| Number of Terminations | 100 |
| Number of Pins | 100 |
| Pin Count | 100 |
| Terminal Pitch | 0.65mm |
| Memory Interface | Parallel |
| Operating Temperature | -40°C~125°C TA |
| Output Characteristics | 3-STATE |
| Length | 20mm |
| Memory Type | Volatile |
| Terminal Finish | Matte Tin (Sn) – annealed |
| Memory Format | SRAM |
| Voltage – Supply | 2.375V~2.625V |
| Package / Case | 100-LQFP |
| I/O Type | COMMON |
| Supply Voltage-Min (Vsup) | 2.375V |
| Supply Voltage-Max (Vsup) | 2.75V |
| ECCN Code | 3A991.B.2.A |
| Technology | SRAM – Synchronous, SDR |
| Density | 4 Mb |
| Access Time | 7.5ns |
| Address Bus Width | 17b |
| Standby Voltage-Min | 2.38V |
| Additional Feature | FLOW-THROUGH ARCHITECTURE |
| Clock Frequency | 117MHz |
| Supply Current-Max | 0.175mA |
| Memory Size | 4Mb 128K x 32 |
| Organization | 128KX32 |
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