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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Number of Functions | 1 |
Number of Ports | 1 |
ECCN Code | EAR99 |
Pbfree Code | yes |
Surface Mount | YES |
Memory Width | 8 |
Packaging | Tray |
Factory Lead Time | 10 Weeks |
Qualification Status | Not Qualified |
Peak Reflow Temperature (Cel) | 260 |
Supply Voltage | 2.5V |
Power Supplies | 2.5V |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Time@Peak Reflow Temperature-Max (s) | 40 |
Operating Temperature | -40°C~85°C TA |
Terminal Pitch | 1mm |
Terminal Position | BOTTOM |
Supply Voltage-Max (Vsup) | 2.7V |
Number of Pins | 60 |
Number of Terminations | 60 |
Pin Count | 60 |
Memory Interface | Parallel |
Height Seated (Max) | 1.2mm |
JESD-609 Code | e1 |
Output Characteristics | 3-STATE |
Memory Type | Volatile |
Data Bus Width | 8b |
Screening Level | AEC-Q100 |
Length | 13mm |
Supply Voltage-Min (Vsup) | 2.3V |
Operating Mode | SYNCHRONOUS |
I/O Type | COMMON |
Memory Format | DRAM |
Clock Frequency | 166MHz |
Write Cycle Time – Word, Page | 15ns |
Refresh Cycles | 8192 |
Terminal Finish | TIN SILVER COPPER |
Standby Current-Max | 0.025A |
Additional Feature | AUTO/SELF REFRESH |
Voltage – Supply | 2.3V~2.7V |
Sequential Burst Length | 248 |
Interleaved Burst Length | 248 |
Memory Density | 536870912 bit |
Technology | SDRAM – DDR |
Memory Size | 512Mb 64M x 8 |
Access Time | 700ps |
Package / Case | 60-TFBGA |
Organization | 64MX8 |
HTS Code | 8542.32.00.28 |
Supply Current-Max | 0.37mA |
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