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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Radiation Hardening | No |
| Factory Lead Time | 6 Weeks |
| Packaging | Tray |
| Memory Width | 16 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Terminal Position | BOTTOM |
| Terminal Pitch | 0.8mm |
| Memory Interface | Parallel |
| Height Seated (Max) | 1.2mm |
| JESD-609 Code | e1 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Memory Type | Volatile |
| Contact Plating | Copper, Silver, Tin |
| Number of Terminations | 96 |
| Number of Pins | 96 |
| Length | 13mm |
| Data Bus Width | 16b |
| Memory Format | DRAM |
| Write Cycle Time – Word, Page | 15ns |
| Supply Voltage | 1.35V |
| Operating Supply Voltage | 1.35V |
| Clock Frequency | 800MHz |
| Access Time | 20ns |
| Address Bus Width | 18b |
| Supply Voltage-Max (Vsup) | 1.45V |
| Package / Case | 96-TFBGA |
| Technology | SDRAM – DDR3L |
| Operating Temperature | -40°C~95°C TC |
| Voltage – Supply | 1.283V~1.45V |
| Supply Voltage-Min (Vsup) | 1.283V |
| Memory Size | 4Gb 256M x 16 |
| Density | 4 Gb |
| Additional Feature | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH |
| Organization | 256MX16 |
| Max Supply Current | 261mA |
*The following components have specifications similar
*The following five components have specifications similar
