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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
Part StatusActive
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting TypeThrough Hole
MountThrough Hole
Number of Elements1
Number of Channels1
Pbfree Codeyes
JESD-609 Codee3
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Peak Reflow Temperature (Cel)NOT SPECIFIED
PackagingTube
Number of Terminations3
Number of Pins3
Factory Lead Time16 Weeks
Max Dual Supply Voltage60V
Reach Compliance Codenot_compliant
Published2009
Drive Voltage (Max Rds On,Min Rds On)10V
Terminal FinishTin (Sn)
Transistor Element MaterialSILICON
Terminal PositionSINGLE
Gate to Source Voltage (Vgs)20V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Operating Temperature-55°C~175°C TJ
Operating ModeENHANCEMENT MODE
Vgs (Max)±20V
ConfigurationSINGLE WITH BUILT-IN DIODE
Turn On Delay Time15 ns
Turn-Off Delay Time20 ns
Continuous Drain Current (ID)45A
Fall Time (Typ)5 ns
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
Rise Time40ns
SeriesAutomotive, AEC-Q101, OptiMOS?
Power Dissipation-Max71W Tc
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Current – Continuous Drain (Id) @ 25°C45A Tc
Avalanche Energy Rating (Eas)97 mJ
Drain-source On Resistance-Max0.0094Ohm
Weight2.387001g
Vgs(th) (Max) @ Id4V @ 34μA
Input Capacitance (Ciss) (Max) @ Vds3785pF @ 25V
Rds On (Max) @ Id, Vgs9.4m Ω @ 45A, 10V

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