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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Mount | Through Hole |
Number of Elements | 1 |
Number of Channels | 1 |
Pbfree Code | yes |
JESD-609 Code | e3 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Packaging | Tube |
Number of Terminations | 3 |
Number of Pins | 3 |
Factory Lead Time | 16 Weeks |
Max Dual Supply Voltage | 60V |
Reach Compliance Code | not_compliant |
Published | 2009 |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Terminal Finish | Tin (Sn) |
Transistor Element Material | SILICON |
Terminal Position | SINGLE |
Gate to Source Voltage (Vgs) | 20V |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Operating Temperature | -55°C~175°C TJ |
Operating Mode | ENHANCEMENT MODE |
Vgs (Max) | ±20V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Turn On Delay Time | 15 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 45A |
Fall Time (Typ) | 5 ns |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Rise Time | 40ns |
Series | Automotive, AEC-Q101, OptiMOS? |
Power Dissipation-Max | 71W Tc |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Current – Continuous Drain (Id) @ 25°C | 45A Tc |
Avalanche Energy Rating (Eas) | 97 mJ |
Drain-source On Resistance-Max | 0.0094Ohm |
Weight | 2.387001g |
Vgs(th) (Max) @ Id | 4V @ 34μA |
Input Capacitance (Ciss) (Max) @ Vds | 3785pF @ 25V |
Rds On (Max) @ Id, Vgs | 9.4m Ω @ 45A, 10V |
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