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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Number of Functions | 1 |
| RoHS Status | Non-RoHS Compliant |
| Surface Mount | YES |
| Moisture Sensitivity Level (MSL) | 3 |
| Temperature Grade | COMMERCIAL |
| Qualification Status | Not Qualified |
| JESD-609 Code | e0 |
| Technology | CMOS |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Max Operating Temperature | 70°C |
| Supply Voltage | 1.8V |
| Reach Compliance Code | not_compliant |
| Published | 2006 |
| Terminal Pitch | 1mm |
| Memory Width | 18 |
| Terminal Position | BOTTOM |
| Interface | Parallel |
| Min Operating Temperature | 0°C |
| Height Seated (Max) | 1.2mm |
| Terminal Form | BALL |
| Output Characteristics | 3-STATE |
| Length | 15mm |
| Frequency | 250MHz |
| Supply Voltage-Min (Vsup) | 1.7V |
| Standby Voltage-Min | 1.7V |
| Peak Reflow Temperature (Cel) | 225 |
| Width | 13mm |
| Terminal Finish | Tin/Lead (Sn63Pb37) |
| Operating Mode | SYNCHRONOUS |
| Supply Voltage-Max (Vsup) | 1.9V |
| Number of Pins | 165 |
| Number of Terminations | 165 |
| Pin Count | 165 |
| Subcategory | SRAMs |
| HTS Code | 8542.32.00.41 |
| ECCN Code | 3A991.B.2.A |
| I/O Type | SEPARATE |
| Memory Density | 18874368 bit |
| Access Time (Max) | 0.45 ns |
| Organization | 1MX18 |
| Power Supplies | 1.5/1.81.8V |
| Memory Type | QDR, RAM, SRAM |
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