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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Surface Mount | NO |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Functions | 1 |
| RoHS Status | Non-RoHS Compliant |
| Part Status | Obsolete |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Memory Width | 8 |
| Supply Voltage | 5V |
| Power Supplies | 5V |
| Packaging | Tray |
| Lead Free | Contains Lead |
| Qualification Status | Not Qualified |
| JESD-609 Code | e0 |
| Supply Voltage-Max (Vsup) | 5.5V |
| Reach Compliance Code | not_compliant |
| Terminal Pitch | 1.27mm |
| Terminal Position | SINGLE |
| Mounting Type | Socket |
| Supply Voltage-Min (Vsup) | 4.5V |
| Memory Interface | Parallel |
| Peak Reflow Temperature (Cel) | 240 |
| Terminal Finish | TIN LEAD |
| Voltage – Supply | 4.5V~5.5V |
| Number of Pins | 72 |
| Number of Terminations | 72 |
| Pin Count | 72 |
| Operating Temperature | 0°C~70°C TA |
| Memory Type | Non-Volatile |
| Published | 1999 |
| Operating Mode | ASYNCHRONOUS |
| Subcategory | SRAMs |
| Write Cycle Time – Word, Page | 120ns |
| HTS Code | 8542.32.00.41 |
| ECCN Code | 3A991.B.2.A |
| Access Time (Max) | 120 ns |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Density | 4194304 bit |
| Organization | 512KX8 |
| Standby Current-Max | 0.28A |
| Supply Current-Max | 0.28mA |
| Frequency | 120GHz |
| Package / Case | 72-SIMM |
| Memory Size | 4Mb 128K x 32 256K x 16 512K x 8 |
| Base Part Number | DS2227 |
| Additional Feature | DATA RETENTION > 10 YEARS; CONFIGURABLE AS 128K X 32 |
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