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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Number of Functions | 1 |
| Radiation Hardening | No |
| Surface Mount | YES |
| Lead Free | Lead Free |
| Part Status | Obsolete |
| Memory Width | 8 |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Packaging | Tray |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Supply Voltage-Min (Vsup) | 3V |
| Published | 2006 |
| Terminal Pitch | 1.27mm |
| Operating Temperature | -40°C~85°C TA |
| Supply Voltage-Max (Vsup) | 3.6V |
| Terminal Position | BOTTOM |
| Memory Interface | Parallel |
| JESD-609 Code | e1 |
| Memory Type | Non-Volatile |
| Voltage – Supply | 3V~3.6V |
| Data Bus Width | 8b |
| Peak Reflow Temperature (Cel) | 245 |
| Number of Terminations | 256 |
| Number of Pins | 256 |
| Pin Count | 256 |
| Length | 27mm |
| Subcategory | SRAMs |
| Terminal Finish | TIN SILVER COPPER |
| Access Time (Max) | 100 ns |
| HTS Code | 8542.32.00.41 |
| ECCN Code | 3A991.B.2.A |
| Supply Current-Max | 0.05mA |
| Write Cycle Time – Word, Page | 100ns |
| Standby Current-Max | 0.005A |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Package / Case | 256-BGA |
| Moisture Sensitivity Level (MSL) | 5 (48 Hours) |
| Density | 16 Mb |
| Memory Size | 16Mb 2M x 8 |
| Organization | 2MX8 |
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