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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Mount | Through Hole |
| Number of Functions | 1 |
| Pbfree Code | yes |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Memory Width | 8 |
| Terminal Position | DUAL |
| Packaging | Tube |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Terminal Pitch | 2.54mm |
| Supply Voltage-Min (Vsup) | 3V |
| REACH SVHC | Unknown |
| Factory Lead Time | 11 Weeks |
| Number of Pins | 32 |
| Number of Terminations | 32 |
| Pin Count | 32 |
| Supply Voltage-Max (Vsup) | 3.6V |
| Published | 2004 |
| Memory Interface | Parallel |
| Operating Supply Current | 50mA |
| Operating Temperature | 0°C~70°C TA |
| Memory Type | Non-Volatile |
| Voltage – Supply | 3V~3.6V |
| Data Bus Width | 8b |
| Subcategory | SRAMs |
| Access Time (Max) | 100 ns |
| ECCN Code | 3A991.B.2.A |
| Supply Current-Max | 0.05mA |
| Write Cycle Time – Word, Page | 100ns |
| Memory Size | 1Mb 128K x 8 |
| Density | 1 Mb |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Organization | 128KX8 |
| HTS Code | 8473.30.11.40 |
| Package / Case | 32-DIP Module (0.600, 15.24mm) |
| Additional Feature | 10 YEAR DATA RETENTION |
| Frequency | 100GHz |
| Standby Current-Max | 0.00025A |
| Base Part Number | DS1245W |
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