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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Number of Ports | 2 |
Mounting Type | Surface Mount |
Mount | Surface Mount |
Number of Functions | 1 |
Radiation Hardening | No |
Packaging | Tray |
Peak Reflow Temperature (Cel) | 260 |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Time@Peak Reflow Temperature-Max (s) | 40 |
Factory Lead Time | 13 Weeks |
Supply Voltage | 1.8V |
Operating Supply Voltage | 1.8V |
Terminal Pitch | 1mm |
Memory Width | 18 |
Terminal Position | BOTTOM |
Memory Interface | Parallel |
Published | 2003 |
JESD-609 Code | e1 |
Height Seated (Max) | 1.4mm |
Operating Temperature | 0°C~70°C TA |
Output Characteristics | 3-STATE |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Memory Type | Volatile |
Memory Format | SRAM |
Supply Voltage-Min (Vsup) | 1.7V |
Standby Voltage-Min | 1.7V |
Standby Current-Max | 0.5A |
Sync/Async | Synchronous |
Length | 17mm |
Supply Voltage-Max (Vsup) | 1.9V |
Number of Pins | 165 |
Number of Terminations | 165 |
Pin Count | 165 |
Voltage – Supply | 1.7V~1.9V |
Word Size | 18b |
Package / Case | 165-LBGA |
Access Time | 450 ps |
I/O Type | SEPARATE |
Clock Frequency | 550MHz |
Address Bus Width | 21b |
Technology | SRAM – Synchronous, QDR II+ |
Density | 144 Mb |
Memory Size | 144Mb 8M x 18 |
Organization | 8MX18 |
Supply Current-Max | 1.09mA |
Base Part Number | CY7C1663 |
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