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*The following are the basic parameters of the product, involving the characteristics of the product and its category
TYPE | DESCRIPTION |
---|---|
Mounting Type | Surface Mount |
Number of Functions | 1 |
RoHS Status | Non-RoHS Compliant |
Surface Mount | YES |
Part Status | Obsolete |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Packaging | Tray |
Lead Free | Contains Lead |
Qualification Status | Not Qualified |
JESD-609 Code | e0 |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Supply Voltage | 1.8V |
Reach Compliance Code | not_compliant |
Terminal Finish | Tin/Lead (Sn/Pb) |
Operating Temperature | -40°C~85°C TA |
Terminal Pitch | 1mm |
Memory Width | 18 |
Terminal Position | BOTTOM |
Memory Interface | Parallel |
Published | 2003 |
Height Seated (Max) | 1.4mm |
Output Characteristics | 3-STATE |
Width | 15mm |
Memory Type | Volatile |
Memory Format | SRAM |
Supply Voltage-Min (Vsup) | 1.7V |
Standby Voltage-Min | 1.7V |
Length | 17mm |
Supply Voltage-Max (Vsup) | 1.9V |
Number of Pins | 165 |
Number of Terminations | 165 |
Pin Count | 165 |
Peak Reflow Temperature (Cel) | 220 |
Voltage – Supply | 1.7V~1.9V |
HTS Code | 8542.32.00.41 |
Additional Feature | PIPELINED ARCHITECTURE |
ECCN Code | 3A991.B.2.A |
Package / Case | 165-LBGA |
Clock Frequency | 167MHz |
I/O Type | SEPARATE |
Technology | SRAM – Synchronous, QDR II |
Memory Size | 72Mb 4M x 18 |
Organization | 4MX18 |
Access Time | 500 ps |
Memory Density | 75497472 bit |
Power Supplies | 1.5/1.81.8V |
Base Part Number | CY7C1512 |
Supply Current-Max | 0.935mA |
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