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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Lead Free | Lead Free |
| Memory Width | 8 |
| Factory Lead Time | 6 Weeks |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Peak Reflow Temperature (Cel) | 260 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Supply Voltage-Min (Vsup) | 3V |
| Operating Temperature | -40°C~85°C TA |
| Number of Terminations | 48 |
| Number of Pins | 48 |
| Supply Voltage-Max (Vsup) | 3.6V |
| Published | 2002 |
| Standby Voltage-Min | 2V |
| Terminal Position | BOTTOM |
| Memory Interface | Parallel |
| Max Frequency | 100MHz |
| JESD-609 Code | e1 |
| Output Characteristics | 3-STATE |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Length | 8mm |
| Memory Type | Volatile |
| Voltage – Supply | 3V~3.6V |
| Word Size | 8b |
| Nominal Supply Current | 60mA |
| Memory Format | SRAM |
| Write Cycle Time – Word, Page | 10ns |
| I/O Type | COMMON |
| Sync/Async | Asynchronous |
| Technology | SRAM – Asynchronous |
| Memory Size | 1Mb 128K x 8 |
| Terminal Pitch | 0.75mm |
| Density | 1 Mb |
| Address Bus Width | 17b |
| Standby Current-Max | 0.003A |
| Package / Case | 48-VFBGA |
| Base Part Number | CY7C1019 |
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