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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| Radiation Hardening | No |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Packaging | Tray |
| Factory Lead Time | 10 Weeks |
| Memory Width | 16 |
| Peak Reflow Temperature (Cel) | 260 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Supply Voltage-Min (Vsup) | 3V |
| Published | 2007 |
| Operating Temperature | -40°C~85°C TA |
| Number of Terminations | 48 |
| Number of Pins | 48 |
| Pin Count | 48 |
| Length | 10mm |
| Supply Voltage-Max (Vsup) | 3.6V |
| Terminal Position | BOTTOM |
| Memory Interface | Parallel |
| Height Seated (Max) | 1.2mm |
| JESD-609 Code | e1 |
| Memory Type | Non-Volatile |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage – Supply | 2.7V~3.6V |
| Data Bus Width | 16b |
| Word Size | 16b |
| Nominal Supply Current | 52mA |
| Subcategory | SRAMs |
| HTS Code | 8542.32.00.41 |
| Access Time (Max) | 45 ns |
| ECCN Code | 3A991.B.2.A |
| Write Cycle Time – Word, Page | 45ns |
| Terminal Pitch | 0.75mm |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Density | 4 Mb |
| Memory Size | 4Mb 256K x 16 |
| Standby Current-Max | 0.008A |
| Organization | 256KX16 |
| Package / Case | 48-TFBGA |
| Base Part Number | CY14V104 |
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