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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
Part StatusActive
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations2
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Number of Elements1
ECCN CodeEAR99
Surface MountYES
JESD-609 Codee3
Contact PlatingTin
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Peak Reflow Temperature (Cel)NOT SPECIFIED
Factory Lead Time12 Weeks
Number of Pins3
Pin Count3
Qualification StatusNot Qualified
Terminal FormGULL WING
Published2010
Gate to Source Voltage (Vgs)10V
Transistor Element MaterialSILICON
Element ConfigurationSingle
Continuous Drain Current (ID)20A
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Transistor ApplicationSWITCHING
Operating Temperature-55°C~175°C TJ
Operating ModeENHANCEMENT MODE
Drain to Source Breakdown Voltage55V
Max Dual Supply Voltage55V
JESD-30 CodeR-PSSO-G2
Case ConnectionDRAIN
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn On Delay Time10 ns
Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
Turn-Off Delay Time28 ns
Vgs (Max)±10V
Fall Time (Typ)33 ns
SeriesAutomotive, AEC-Q101, TrenchMOS?
Vgs(th) (Max) @ Id2V @ 1mA
Current – Continuous Drain (Id) @ 25°C20A Tc
Rise Time47 ns
Power Dissipation62W
Avalanche Energy Rating (Eas)72 mJ
Power Dissipation-Max62W Tc
Input Capacitance (Ciss) (Max) @ Vds643pF @ 25V
Rds On (Max) @ Id, Vgs68m Ω @ 10A, 10V

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