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Product Details

*The following are the basic parameters of the product, involving the characteristics of the product and its category

TYPEDESCRIPTION
Part StatusActive
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Number of Terminations2
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Number of Elements1
ECCN CodeEAR99
Surface MountYES
JESD-609 Codee3
Lead FreeLead Free
Contact PlatingTin
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Peak Reflow Temperature (Cel)NOT SPECIFIED
Number of Pins3
Pin Count3
Qualification StatusNot Qualified
Terminal FormGULL WING
Published2010
Reach Compliance Codenot_compliant
Gate to Source Voltage (Vgs)10V
Transistor Element MaterialSILICON
Terminal PositionSINGLE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Transistor ApplicationSWITCHING
Operating Temperature-55°C~175°C TJ
Operating ModeENHANCEMENT MODE
Factory Lead Time26 Weeks
Drain to Source Breakdown Voltage55V
Max Dual Supply Voltage55V
JESD-30 CodeR-PSSO-G2
ConfigurationSINGLE WITH BUILT-IN DIODE
Case ConnectionDRAIN
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
Turn On Delay Time45 ns
Continuous Drain Current (ID)55A
Turn-Off Delay Time400 ns
Vgs (Max)±10V
HTS Code8541.29.00.75
Fall Time (Typ)130 ns
SeriesAutomotive, AEC-Q101, TrenchMOS?
Vgs(th) (Max) @ Id2V @ 1mA
Drain-source On Resistance-Max0.02Ohm
Rise Time130ns
Avalanche Energy Rating (Eas)120 mJ
Power Dissipation114W
Current – Continuous Drain (Id) @ 25°C55A Tc
Power Dissipation-Max114W Tc
Pulsed Drain Current-Max (IDM)219A
Input Capacitance (Ciss) (Max) @ Vds2920pF @ 25V
Rds On (Max) @ Id, Vgs17.6m Ω @ 25A, 10V

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