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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Elements | 2 |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| ECCN Code | EAR99 |
| Radiation Hardening | No |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Number of Pins | 8 |
| Number of Terminations | 8 |
| Terminal Form | GULL WING |
| REACH SVHC | No SVHC |
| Terminal Finish | Matte Tin (Sn) |
| Published | 2011 |
| Element Configuration | Dual |
| Transistor Element Material | SILICON |
| Length | 5mm |
| Max Power Dissipation | 2W |
| Power Dissipation | 2W |
| Gate to Source Voltage (Vgs) | 20V |
| Part Status | Not For New Designs |
| Width | 4mm |
| Operating Temperature | -55°C~150°C TJ |
| Threshold Voltage | 1V |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Transistor Application | SWITCHING |
| Operating Mode | ENHANCEMENT MODE |
| Height | 1.5mm |
| Factory Lead Time | 26 Weeks |
| Drain to Source Breakdown Voltage | 55V |
| Subcategory | Other Transistors |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Series | HEXFET? |
| Continuous Drain Current (ID) | 3.4A |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Drain Current-Max (Abs) (ID) | 4.7A |
| FET Type | N and P-Channel |
| Drain-source On Resistance-Max | 0.05Ohm |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Nominal Vgs | 1 V |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 4.7A, 10V |
| Current – Continuous Drain (Id) @ 25°C | 4.7A 3.4A |
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