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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Data Polling | YES |
| Toggle Bit | YES |
| JESD-609 Code | e3 |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Memory Width | 8 |
| Terminal Position | DUAL |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Packaging | Tray |
| Technology | CMOS |
| REACH SVHC | No SVHC |
| Peak Reflow Temperature (Cel) | 260 |
| Data Retention Time-Min | 10 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Programming Voltage | 3V |
| Factory Lead Time | 9 Weeks |
| Number of Pins | 32 |
| Number of Terminations | 32 |
| Terminal Pitch | 0.5mm |
| Memory Interface | Parallel |
| Height Seated (Max) | 1.2mm |
| Published | 1997 |
| Memory Type | Non-Volatile |
| Width | 8mm |
| Voltage – Supply | 3V~3.6V |
| Nominal Supply Current | 15mA |
| Memory Format | EEPROM |
| Supply Voltage-Max (Vsup) | 3.465V |
| Supply Voltage-Min (Vsup) | 3.135V |
| Write Cycle Time – Word, Page | 10ms |
| Write Cycle Time-Max (tWC) | 10 ms |
| Operating Temperature | -40°C~85°C TC |
| Length | 18.4mm |
| Endurance | 100000 Write/Erase Cycles |
| Memory Size | 1Mb 128K x 8 |
| Access Time | 200ns |
| Density | 1 Mb |
| Organization | 128KX8 |
| Standby Current-Max | 0.00005A |
| Package / Case | 32-TFSOP (0.724, 18.40mm Width) |
| Interface | Parallel, SPI |
| Page Size | 128words |
| Frequency | 200GHz |
| Base Part Number | AT28LV010 |
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