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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| RoHS Status | Non-RoHS Compliant |
| Data Polling | YES |
| Toggle Bit | YES |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Memory Width | 8 |
| Terminal Position | DUAL |
| Supply Voltage | 5V |
| Operating Supply Voltage | 5V |
| Power Supplies | 5V |
| Programming Voltage | 5V |
| Packaging | Tube |
| Pbfree Code | no |
| Lead Free | Contains Lead |
| Qualification Status | Not Qualified |
| JESD-609 Code | e0 |
| Technology | CMOS |
| Contact Plating | Lead, Tin |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Terminal Pitch | 1.27mm |
| Number of Terminations | 28 |
| Number of Pins | 28 |
| Memory Interface | Parallel |
| Terminal Finish | TIN LEAD |
| Voltage – Supply | 4.5V~5.5V |
| Published | 1997 |
| Memory Type | Non-Volatile |
| Output Characteristics | 3-STATE |
| Nominal Supply Current | 80mA |
| Factory Lead Time | 23 Weeks |
| Width | 10.16mm |
| Memory Format | EEPROM |
| Write Cycle Time – Word, Page | 10ms |
| Operating Mode | ASYNCHRONOUS |
| Access Time | 120ns |
| Write Cycle Time-Max (tWC) | 3ms |
| Memory Size | 256Kb 32K x 8 |
| Endurance | 100000 Write/Erase Cycles |
| Density | 256 kb |
| Organization | 32KX8 |
| Height Seated (Max) | 3.02mm |
| Operating Temperature | -55°C~125°C TC |
| Interface | Parallel, SPI |
| Standby Current-Max | 0.0003A |
| Page Size | 64words |
| Screening Level | MIL-STD-883 Class C |
| Base Part Number | AT28HC256 |
| Additional Feature | AUTOMATIC WRITE |
| Frequency | 120GHz |
| Package / Case | 28-CFlatPack |
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