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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| Mounting Type | Surface Mount |
| Mount | Surface Mount |
| Number of Functions | 1 |
| RoHS Status | Non-RoHS Compliant |
| Data Polling | YES |
| Toggle Bit | YES |
| Memory Width | 8 |
| Supply Voltage | 5V |
| Operating Supply Voltage | 5V |
| Power Supplies | 5V |
| Programming Voltage | 5V |
| Packaging | Tube |
| Pbfree Code | no |
| Lead Free | Contains Lead |
| Qualification Status | Not Qualified |
| JESD-609 Code | e0 |
| Height Seated (Max) | 2.54mm |
| Technology | CMOS |
| Contact Plating | Lead, Tin |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Pitch | 1.27mm |
| Number of Pins | 32 |
| Number of Terminations | 32 |
| Terminal Position | QUAD |
| Memory Interface | Parallel |
| Nominal Supply Current | 50mA |
| Voltage – Supply | 4.5V~5.5V |
| Published | 1997 |
| Memory Type | Non-Volatile |
| Output Characteristics | 3-STATE |
| Factory Lead Time | 23 Weeks |
| Peak Reflow Temperature (Cel) | 225 |
| Memory Format | EEPROM |
| Width | 11.43mm |
| Write Cycle Time – Word, Page | 10ms |
| Write Cycle Time-Max (tWC) | 10ms |
| Operating Mode | ASYNCHRONOUS |
| Length | 13.97mm |
| Memory Size | 256Kb 32K x 8 |
| Density | 256 kb |
| Access Time | 250ns |
| Operating Temperature | -55°C~125°C TC |
| Interface | Parallel, SPI |
| Standby Current-Max | 0.0003A |
| Endurance | 10000 Write/Erase Cycles |
| Page Size | 64words |
| Screening Level | MIL-STD-883 Class C |
| Additional Feature | AUTOMATIC WRITE |
| Package / Case | 32-CLCC |
| Base Part Number | AT28C256 |
| Frequency | 250GHz |
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