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*The following are the basic parameters of the product, involving the characteristics of the product and its category
| TYPE | DESCRIPTION |
|---|---|
| Part Status | Active |
| Number of Functions | 1 |
| Number of Ports | 1 |
| RoHS Status | RoHS Compliant |
| Pbfree Code | yes |
| Radiation Hardening | No |
| Surface Mount | YES |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Supply Voltage | 3.3V |
| Operating Supply Voltage | 3.3V |
| Moisture Sensitivity Level (MSL) | 3 |
| Technology | CMOS |
| Published | 2012 |
| Peak Reflow Temperature (Cel) | 260 |
| Max Operating Temperature | 70°C |
| Min Supply Voltage | 3V |
| Standby Voltage-Min | 3V |
| Temperature Grade | INDUSTRIAL |
| Number of Terminations | 48 |
| Number of Pins | 48 |
| Pin Count | 48 |
| Max Supply Voltage | 3.6V |
| Terminal Position | BOTTOM |
| Interface | Parallel |
| Min Operating Temperature | 0°C |
| Thickness | 1.2mm |
| Terminal Form | BALL |
| JESD-609 Code | e1 |
| Output Characteristics | 3-STATE |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Length | 9mm |
| Width | 9mm |
| I/O Type | COMMON |
| Access Time | 15 ns |
| Subcategory | SRAMs |
| Standby Current-Max | 0.02A |
| Address Bus Width | 18b |
| Memory Size | 512kB |
| Terminal Pitch | 0.75mm |
| Density | 4 Mb |
| Memory Type | RAM, SDR, SRAM – Asynchronous |
| Package / Case | TFBGA |
*The following components have specifications similar
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